The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Oct. 30, 2018
Applicant:
The United States of America As Represented BY the Director, National Security Agency, Washington, DC (US);
Inventor:
Charles George Tahan, Kensington, MD (US);
Assignee:
The United States of America, as represented by Director National Security Agency, Washington, DC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 39/02 (2006.01); H01L 39/22 (2006.01); H01L 39/12 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
H01L 39/025 (2013.01); H01L 39/12 (2013.01); H01L 39/223 (2013.01); H01L 39/228 (2013.01); H01L 39/2493 (2013.01);
Abstract
Superconducting regions formed with a crystal provide highly doped regions of acceptor atoms. These superconducting regions are used to provide superconducting devices wherein non-epitaxial interfaces have been eliminated. A method is provided to highly doped regions of a crystal to form the superconducting regions and devices. By forming the superconducting regions within the crystal non-epitaxial interfaces are eliminated.