The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Sep. 15, 2016
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Yu-Ren Peng, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Shih-I Chen, Hsinchu, TW;
Rong-Ren Lee, Hsinchu, TW;
Hsin-Chan Chung, Hsinchu, TW;
Wen-Luh Liao, Hsinchu, TW;
Yi-Chieh Lin, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/12 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/105 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/38 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/30 (2013.01);
Abstract
A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.