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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10367107 B1

PDFFull Text
Date of Patent:
Jul. 30, 2019

Filed:

Dec. 16, 2016

Multijunction photovoltaic device having an si barrier between cells

Applicant:

Iqe Plc., Cardiff, GB;

Inventors:

Andrew Johnson, Newport, GB;

Andrew William Nelson, Cowbridge, GB;

Robert Cameron Harper, Newport, GB;

Assignee:

IQE PLC, Cardiff, GB;

Attorneys:

Jackson Walker LLP

Christopher J. Rourk

Thomas B. Hayes

Primary Examiner:

William F Kraig

Assistant Examiner:

Khatib A Rahman

Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/0328 (2006.01); H01L 31/0687 (2012.01); H01L 31/0304 (2006.01); H01L 31/0735 (2012.01); H01L 31/074 (2012.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/267 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0328 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/267 (2013.01); H01L 31/02167 (2013.01); H01L 31/03044 (2013.01); H01L 31/068 (2013.01); H01L 31/0687 (2013.01); H01L 31/06875 (2013.01); H01L 31/074 (2013.01); H01L 31/0725 (2013.01); H01L 31/0735 (2013.01); H01L 31/1812 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.

Find Patent Forward Citations

Johnson, Andrew. (2019). Multijunction photovoltaic device having an si barrier between cells (U.S. Patent No. 10367107). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10367107

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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