The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Aug. 13, 2015
Ntt Electronics Corporation, Yokohama-shi, Kanagawa, JP;
Makoto Shimizu, Kanagawa, JP;
Hiroki Itoh, Kanagawa, JP;
Tadao Ishibashi, Kanagawa, JP;
Isamu Kotaka, Kanagawa, JP;
NTT ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
A semiconductor element capable of adjusting a barrier height ϕand performing zero-bias operation and impedance matching with an antenna for improving detection sensitivity of high-frequency RF electric signals, a method of manufacturing the same, and a semiconductor device having the same. In the semiconductor element, a concentration of InGaAs (n-type InGaAs layer) is intentionally set to be high over a range for preventing the 'change of the barrier height caused by the bias' described above up to a deep degeneration range. An electron Fermi level (E) increases from a band edge of InGaAs (n-type InGaAs layer) to a band edge of InP (InP depletion layer).