The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Feb. 08, 2017
Applicant:
Stmicroelectronics SA, Montrouge, FR;
Inventors:
Sotirios Athanasiou, Grenoble, FR;
Philippe Galy, Le Touvet, FR;
Assignee:
STMicroelectronics SAA, Montrouge, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 29/78603 (2013.01); H01L 29/78615 (2013.01); H01L 29/78648 (2013.01);
Abstract
A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.