The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Oct. 26, 2006
Applicant:
Benoit Racine, Renage, FR;
Inventor:
Benoit Racine, Renage, FR;
Assignee:
INTERDIGITAL CE PATENT HOLDINGS, Paris, FR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3274 (2013.01); H01L 27/3248 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01); H01L 51/0566 (2013.01); H01L 51/5012 (2013.01); H01L 51/5052 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5092 (2013.01); H01L 51/5096 (2013.01); H01L 51/5203 (2013.01); H01L 51/5253 (2013.01); H01L 51/5271 (2013.01);
Abstract
In this element, one of the current flow electrodes of the transistor and the lower electrode of the diode form a common layer. According to the invention, the transistor includes what is called a 'contact' zone made of semiconductor material which is placed between at least one of its current flow electrodes and its active zone made of semiconductor material and which is doped with one or more dopants, which are electron donors or electron acceptors.