logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10367009 B1

PDFFull Text
Date of Patent:
Jul. 30, 2019

Filed:

Jun. 02, 2016

Active-matrix substrate

Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Tadayoshi Miyamoto, Sakai, JP;

Fumiki Nakano, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); G02F 1/1362 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 23/522 (2013.01); H01L 27/1262 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14663 (2013.01); H01L 27/14692 (2013.01); H01L 29/786 (2013.01); G02F 1/136286 (2013.01); G02F 2001/13629 (2013.01); H01L 27/1225 (2013.01); H01L 27/3279 (2013.01); H01L 29/7869 (2013.01);
Abstract

Provided is an active-matrix substrate in which the line resistance is decreased. The active-matrix substrate includes a substrate, a plurality of gate lines Gj disposed on the substrateand extending in a first direction, a plurality of source lines Si disposed on the substrateand extending in a second direction different from the first direction, a transistordisposed correspondingly to each of intersection points of the gate lines and the source lines Si and connected to a corresponding one of the gate lines Gj and a corresponding one of the source lines Si, an insulating layer, and extended conductive films, and. At least ones of the gate lines Gj and the source lines Si each have a layered structure with connection to the extended conductive film via a contact hole provided in the insulating layer.

Find Patent Forward Citations

Loading…