The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Apr. 12, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Shin-hwan Kang, Seoul, KR;
Heon-kyu Lee, Hwaseong-si, KR;
Kohji Kanamori, Seoul, KR;
Jae-duk Lee, Seongnam-si, KR;
Jae-hoon Jang, Seongnam-si, KR;
Kwang-soo Kim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A vertical non-volatile memory device includes a substrate including a cell region; a lower insulating layer on the substrate; a lower wiring pattern in the cell region having a predetermined pattern and connected to the substrate through the lower insulating layer; and a plurality of vertical channel layers extending in a vertical direction with respect to a top surface of the substrate in the cell region, spaced apart from one another in a horizontal direction with respect to the top surface of the substrate, and electrically connected to the lower wiring pattern. The memory device also includes a plurality of gate electrodes stacked alternately with interlayer insulating layers in the cell region in the vertical direction along a side wall of a vertical channel layer and formed to extend in a first direction along the horizontal direction.