The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Sep. 04, 2015
Fairchild Korea Semiconductor Ltd., Bucheon-si, KR;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate. The diode part includes a p-type body region disposed inside the substrate and electrically connected with the anode terminal, an n-type well disposed on one side of the p-type body region and having a first impurity concentration, and a first n-type semiconductor region disposed below the p-type body region and having a second impurity concentration which is lower than the first impurity concentration.