The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 11, 2016
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Yukinao Kaga, Toyama, JP;
Arito Ogawa, Toyama, JP;
Assignee:
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); C23C 16/32 (2013.01); C23C 16/455 (2013.01); C23C 16/45531 (2013.01); C23C 16/52 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01);
Abstract
A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.