The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Nov. 13, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yong-sung Cho, Hwaseong-si, KR;
Il-han Park, Suwon-si, KR;
Jung-yun Yun, Seoul, KR;
Youn-ho Hong, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a programming method of a nonvolatile memory device, the method comprising the steps of a first programming loop including applying a first verifying voltage to word lines of a plurality of first memory cells for being programmed in a first programming state of a first target threshold voltage and detecting, from among the plurality of first memory cells, a first slow memory cell whose threshold voltage is less than the first verifying voltage, a second programming loop including applying a first program pulse to the first memory cells and applying a second program pulse to the first slow memory cell, a voltage level of the second program pulse of the second program loop being greater than a voltage level of the first program pulse of the second program loop, and a third programming loop.