The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Jan. 15, 2018
Gigadevice Semiconductor (Shanghai) Inc., Shanghai, CN;
Gigadevice Semiconductor (Beijing) Inc., Beijing, CN;
Gigadevice Semiconductor (Hefei) Inc., Hefei, CN;
Minyi Chen, San Jose, CA (US);
GigaDevice Semiconductor (Shanghai) Inc., Shanghai, CN;
GigaDevice Semiconductor (Beijing) Inc., Beijing, CN;
GigaDevice Semiconductor (Hefei) Inc., Hefei, CN;
Abstract
The present application provides a NAND flash memory with wordline voltage compensate, including wordlines. Each wordline corresponds to a wordline voltage with a compensated temperature coefficient. The wordlines are divided into a plurality of groups, each group corresponds to a compensated temperature coefficient. Each wordline corresponds to a wordline address, and the groups of wordlines are divided by at least a border according to wordline addresses, or divided by zones having fixed number of wordlines.