The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2019

Filed:

Sep. 04, 2015
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Mir Ashkan Seyedi, Palo Alto, CA (US);

Chin-Hui Chen, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/293 (2006.01); G02F 1/015 (2006.01); G02F 1/025 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/12007 (2013.01); G02B 6/29338 (2013.01); G02F 1/025 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12123 (2013.01); G02F 2001/0151 (2013.01);
Abstract

An apparatus includes an optical rib waveguide on a substrate, the optical rib waveguide further includes: a slab layer of silicon, a shallow rib of silicon in height that tapers laterally along a taper region, a deep rib of silicon that meets the shallow rib along the taper region of the shallow rib, and wherein the deep rib and the shallow rib have a same width, and wherein the shallow rib has a greater height than the deep rib, a core of silicon that tapers laterally in a range of 50-90% and extends on top of the deep rib and the shallow rib, and a cladding layer of silicon oxide that covers the slab, core, deep rib, and shallow rib.


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