The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Sep. 08, 2016
Applicant:
University of Washington, Seattle, WA (US);
Inventors:
Assignee:
University of Washington, Seattle, WA (US);
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/18 (2006.01); G02B 1/00 (2006.01);
U.S. Cl.
CPC ...
G02B 5/1871 (2013.01); G02B 1/002 (2013.01); G02B 5/1814 (2013.01); G02B 5/1828 (2013.01); G02B 5/1876 (2013.01); G02B 2005/1804 (2013.01);
Abstract
Disclosed herein are metasurfaces formed on a substrate from a plurality of posts. The metasurfaces are configured to be optically active at one or more wavelengths and in certain embodiments are configured to form lenses having unexpectedly strong focusing power. In particular, the metasurfaces are formed from 'low-contrast' materials, including CMOS-compatible materials such as silicon dioxide or silicon nitride. Accordingly, the disclosed metasurfaces are generally CMOS compatible and therefore embody a new paradigm in metasurface design and manufacturing.