The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 16, 2017
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventors:
Roberto Somaschini, Vimercate, IT;
Pietro Petruzza, Usmate Velate, IT;
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 26/08 (2006.01); B81C 1/00 (2006.01); G02B 5/00 (2006.01); G03B 21/28 (2006.01); G03B 21/00 (2006.01); G02B 26/10 (2006.01); G03B 21/20 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00595 (2013.01); B81C 1/00206 (2013.01); G02B 5/003 (2013.01); G02B 26/0833 (2013.01); G03B 21/28 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0198 (2013.01); G02B 26/101 (2013.01); G03B 21/008 (2013.01); G03B 21/2033 (2013.01);
Abstract
A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way. As a result, a surface portion of the silicon body is removed, in a non-uniform way, to a depth not greater than 10 nm.