The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Dec. 01, 2016
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Kan Takeuchi, Tokyo, JP;
Masaki Shimada, Tokyo, JP;
Takeshi Okagaki, Tokyo, JP;
Yoshio Takazawa, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/03 (2006.01); G01R 31/28 (2006.01); H03K 3/011 (2006.01); H03K 5/159 (2006.01); G01R 31/317 (2006.01);
U.S. Cl.
CPC ...
H03K 3/0315 (2013.01); G01R 31/2856 (2013.01); G01R 31/31725 (2013.01); H03K 3/011 (2013.01); H03K 5/159 (2013.01);
Abstract
There is to provide a semiconductor device capable of predicting a wear-out failure based on the degradation stress cumulative amount of power supply voltage and environmental temperature imposed on the device, which includes a ring oscillator having a plurality of stages of inverters, and a control circuit that emphasizes the voltage dependency and temperature dependency of an oscillation frequency of the ring oscillator or a control circuit that emphasizes the temperature dependency not the voltage dependency.