The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
May. 19, 2017
The Regents of the University of California, Oakland, CA (US);
Connie Chang-Hasnain, Palo Alto, CA (US);
Pengfei Qiao, Albany, CA (US);
Kevin Taylor Cook, Berkeley, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
Vertical-cavity surface-emitting laser (VCSEL) structures are described which enable their use as widely wavelength-swept coherent light sources and multiple-wavelength VCSEL arrays. Three general configurations are described: (a) a semiconductor-cavity-dominant (SCD) with high reflection at the semiconductor-air interface, (b) an extended-cavity (EC) design in which reflections at the semiconductor-air interface is reduced to insignificance compared to the SCD design with a refractive index-matched layer (i.e., AR layer) so the entire structure resonates as one cavity, and (c) an air-cavity-dominant (ACD) design which facilitates a larger field confinement in the air gap, and the increased field confinement causes the air gap to be the dominant cavity.