The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jun. 26, 2017
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chao-Hsing Chen, Hsinchu, TW;

Jia-Kuen Wang, Hsinchu, TW;

Wen-Hung Chuang, Hsinchu, TW;

Tzu-Yao Tseng, Hsinchu, TW;

Cheng-Lin Lu, Hsinchu, TW;

Chi-Shiang Hsu, Hsinchu, TW;

Tsung-Hsun Chiang, Hsinchu, TW;

Bo-Jiun Hu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/38 (2010.01); F21V 29/77 (2015.01); F21K 9/232 (2016.01); F21K 9/237 (2016.01); F21V 3/02 (2006.01); F21V 5/04 (2006.01); F21V 23/06 (2006.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); F21Y 115/10 (2016.01); H01L 33/42 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); F21K 9/232 (2016.08); F21K 9/237 (2016.08); F21V 3/02 (2013.01); F21V 5/04 (2013.01); F21V 23/06 (2013.01); F21V 29/77 (2015.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); F21Y 2115/10 (2016.08); H01L 33/20 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 2224/16245 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.


Find Patent Forward Citations

Loading…