The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Sep. 05, 2017
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Koichi Takenaga, Tokushima, JP;

Keiji Emura, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/50 (2013.01); H01L 33/58 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01);
Abstract

A light emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, a plurality of holes, a first p-electrode, a second p-electrode and an n-electrode. The n-side semiconductor layer has a hexagonal shape in plan view. The p-side semiconductor layer has a hexagonal shape in plan view and provided over the n-side semiconductor layer. The holes are arranged in the p-side semiconductor layer so that the n-side semiconductor layer is exposed through the plurality of holes. The first p-electrode is in contact with the p-side semiconductor layer. The second p-electrode is arranged on the first p-electrode adjacent to a corner corresponding to one of vertices of the hexagonal shape. The second p-electrode has sides that are respectively parallel to sides defining the corner in plan view. The n-electrode is arranged over the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.


Find Patent Forward Citations

Takenaga, Koichi. (2019). Light emitting element and light emitting device (U.S. Patent No. 10361340). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10361340

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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