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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10361334 B1

PDFFull Text
Date of Patent:
Jul. 23, 2019

Filed:

Dec. 31, 2014

Cross-talk suppression in geiger-mode avalanche photodiodes

Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

K. Alexander McIntosh, Groton, MA (US);

David C. Chapman, Albuquerque, NM (US);

Joseph P. Donnelly, Carlisle, MA (US);

Douglas C. Oakley, Natick, MA (US);

Antonio Napoleone, Watertown, MA (US);

Erik K. Duerr, Groton, MA (US);

Simon Verghese, Arlington, MA (US);

Richard D. Younger, Cambridge, MA (US);

Assignee:

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:

Theresa A. Lober

Primary Examiner:

Hsin Yi Hsieh

Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 27/144 (2006.01); H01L 31/0216 (2014.01); H01L 25/16 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 25/167 (2013.01); H01L 27/1446 (2013.01); H01L 31/02005 (2013.01); H01L 31/02162 (2013.01); H01L 31/02327 (2013.01); H01L 31/03046 (2013.01); H01L 31/0352 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.

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