The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Apr. 05, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Seung Ho Jung, Yongin-si, KR;

Chaun Gi Choi, Yongin-si, KR;

Hye Young Park, Yongin-si, KR;

Eun Young Lee, Yongin-si, KR;

Joo Hee Jeon, Yongin-si, KR;

Eun Jeong Cho, Yongin-si, KR;

Bo Geon Jeon, Yongin-si, KR;

Yung Bin Chung, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01); H01L 29/78 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 29/7849 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 51/0097 (2013.01); H01L 51/5256 (2013.01); H01L 27/3244 (2013.01); H01L 27/3262 (2013.01); H01L 2251/5338 (2013.01); H01L 2251/55 (2013.01); Y02E 10/549 (2013.01);
Abstract

A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).


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