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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10361298 B1

PDFFull Text
Date of Patent:
Jul. 23, 2019

Filed:

Nov. 27, 2017

Semiconductor device having improved trench and electrode structures

Applicant:

Sanken Electric Co., Ltd., Niiza-Shi, Saitama, JP;

Inventors:

Shunsuke Fukunaga, Saitama, JP;

Taro Kondo, Niiza, JP;

Shinji Kudoh, Hiki, JP;

Assignee:

SANKEN ELECTRIC CO., LTD., Niiza-Shi, JP;

Attorney:

Metrolexis Law Group, PLLC

Primary Examiner:

Nduka E Ojeh

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/167 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/41766 (2013.01); H01L 29/41775 (2013.01); H01L 29/4236 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/26513 (2013.01); H01L 21/28035 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/324 (2013.01); H01L 29/167 (2013.01);
Abstract

A semiconductor device may comprise a substrate; a trench formed in the substrate and filled with an insulating layer; and a gate electrode and a source embedded in the insulating layer. The gate electrode and the source electrode may be positioned in the insulating layer in the trench above and below each other. From a cross-sectional perspective, the gate electrode and the source electrode are not overlapped in horizontal or vertical direction. The trench may extend to a first depth of a bottom surface of the trench below the gate electrode, and may extend to a second depth of the bottom surface of the trench below the source electrode. The first depth and the second depth may be different.

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