The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Feb. 28, 2017
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Jun Kawai, Kariya, JP;
Kazuhiko Sugiura, Kariya, JP;
Yasuji Kimoto, Nagakute, JP;
Kayo Kondo, Nagakute, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/268 (2013.01); H01L 21/28 (2013.01); H01L 29/41725 (2013.01); H01L 29/456 (2013.01); H01L 29/66068 (2013.01);
Abstract
A silicon carbide semiconductor device includes: a semiconductor substrate that has a front surface and a rear surface, and is made of silicon carbide; and an ohmic electrode that is ohmically connected to the front surface or the rear surface of the semiconductor substrate. The ohmic electrode includes a metal silicide part and a metal carbide part. The metal silicide part surrounds a periphery of the metal carbide part that has a block shape. The metal silicide part is disposed between the semiconductor substrate and the metal carbide part.