The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Oct. 24, 2017
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Takashi Okawa, Nisshin, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor device includes a compound semiconductor substrate including a gate region and an active region, a trench provided in a range between the gate region and the active region, a gate insulating film disposed in the trench, a source electrode, and a drain electrode. The gate region includes a first gate region of a p-type being in contact with the gate insulating film, a second gate region of the p-type having a p-type impurity concentration lower than a p-type impurity concentration of the first gate region, a third gate region of an n-type, and a fourth gate region of the p-type. The active region includes a source region of the n-type being in contact with the gate insulating film, a body region of the p-type facing the second gate region via the gate insulating film, and a drain region of the n-type.