The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Jun. 01, 2015
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Yuki Ueda, Osaka, JP;
Masao Uchida, Osaka, JP;
Abstract
A semiconductor device comprises a semiconductor substrate, a silicon carbide semiconductor layer of a first conductivity type on the semiconductor substrate, at least one ring-shaped region of a second conductivity type in the silicon carbide semiconductor layer, a first insulating film in contact with a part of the silicon carbide semiconductor layer, and a second insulating film which has a relative dielectric constant larger than a relative dielectric constant of the first insulating film and which is in contact with a part of the at least one ring-shaped region. In the semiconductor device, the at least one ring-shaped region is located in a termination region. The termination region surrounds a semiconductor element region when viewed from the direction perpendicular to a principal surface of the semiconductor substrate.