The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Oct. 20, 2017
Applicant:

Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Chenghao Bu, Guangdong, CN;

Hong Fang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/32 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/3213 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02675 (2013.01); H01L 21/26513 (2013.01); H01L 21/32139 (2013.01); H01L 27/1262 (2013.01); H01L 27/1274 (2013.01); H01L 27/1288 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3276 (2013.01); H01L 29/66765 (2013.01); H01L 29/78678 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1248 (2013.01); H01L 51/0097 (2013.01); H01L 2227/323 (2013.01); H01L 2251/5338 (2013.01);
Abstract

This disclosure discloses a manufacturing method of a TFT substrate, a TFT substrate, and an OLED display panel. The manufacturing method of the TFT substrate includes sequentially forming a gate electrode, a gate insulating layer, a polysilicon layer, and a barrier layer on the substrate, the polysilicon layer including a source region, a drain region, and a channel region; the barrier layer above the source and drain regions is etched by a photomask so that the thickness of the barrier layer allows ions to pass through and is not zero; and then the polysilicon layer is ion implanted; through the method, the polysilicon layer of the source and drain regions can be ion implanted without exposing the polysilicon layer, the damage of the polysilicon layer during the process can be avoided, and the stability of the TFT substrate can be improved, thereby improving the display quality.


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