The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Nov. 16, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin Sub Lee, Suwon-si, KR;

Han Kyu Seong, Suwon-si, KR;

Yong Il Kim, Seoul, KR;

Jung Sub Kim, Hwaseong-si, KR;

Seul Gee Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/50 (2010.01); H05B 33/08 (2006.01); H05B 37/02 (2006.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 27/153 (2013.01); H01L 33/505 (2013.01); H05B 33/086 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 33/502 (2013.01); H01L 33/504 (2013.01); H01L 2933/0041 (2013.01); H05B 33/0845 (2013.01); H05B 37/0272 (2013.01);
Abstract

A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.


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