The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Feb. 27, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Hideomi Kumano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/225 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14685 (2013.01); H04N 5/2251 (2013.01); H04N 5/2252 (2013.01); H04N 5/2256 (2013.01); H01L 27/14643 (2013.01);
Abstract

A back-side illumination image capturing apparatus includes a semiconductor substrate having a first surface for receiving incident light and a second surface located on the opposite side as the first surface, and including a photoelectric conversion portion, and a gate electrode disposed above the second surface. The apparatus further includes a first insulating layer disposed above the second surface of the semiconductor substrate, an interlayer insulation film disposed on the first insulating layer, a contact plug connected to the gate electrode, and a light-cutting portion for cutting light, of the incident light, that has passed through the photoelectric conversion portion. The light-cutting portion passes through at least part of the interlayer insulation film. The first insulating layer is located between the light-cutting portion and the semiconductor substrate.


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