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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10361191 B1

PDFFull Text
Date of Patent:
Jul. 23, 2019

Filed:

Aug. 26, 2014

Semiconductor device

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Tetsuo Takahashi, Tokyo, JP;

Katsumi Uryu, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Tony Tran

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 27/07 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 27/0727 (2013.01); H01L 29/0834 (2013.01); H01L 29/1004 (2013.01); H01L 29/417 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/861 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device includes a switching device region including an active region having a first conductivity-type emitter region formed on an upper surface side of a first conductivity-type substrate, a second conductivity-type base region formed on an upper surface side of the substrate, a second conductivity-type collector layer formed on a lower surface side of the substrate, and a diode region having a second conductivity-type anode layer formed on the upper surface side of the substrate and a first conductivity-type cathode layer formed on the lower surface side of the substrate, wherein the cathode layer is separated from the active region when planarly viewed, and on an upper surface side of the active region, a second conductivity type high-concentration region having an impurity concentration higher than that of the anode layer is formed.

Find Patent Forward Citations

Takahashi, Tetsuo. (2019). Semiconductor device (U.S. Patent No. 10361191). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10361191

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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