The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jul. 08, 2015
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Hideki Mori, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 23/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 23/5286 (2013.01); H01L 23/66 (2013.01); H01L 27/027 (2013.01); H01L 27/1203 (2013.01); H01L 29/7391 (2013.01);
Abstract

The electrostatic protective device includes an insulator and a semiconductor layer. The semiconductor layer includes a device forming region and a device separating region. The device forming region includes a primary first conductive impurity diffused layer, a body region, a secondary first conductive impurity diffused layer, and a second conductive region that are arranged in order. The second conductive region includes a second conductive impurity diffused layer separated electrically from the body region. The device separating region includes a device separating layer that surrounds the device forming region. A gate electrode is further provided on the body region in the semiconductor layer with an insulating film interposed in between.


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