The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Nov. 22, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/82 (2006.01); H01L 29/41 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 21/8234 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76831 (2013.01); H01L 21/76846 (2013.01); H01L 21/823431 (2013.01); H01L 23/5226 (2013.01); H01L 29/41791 (2013.01); H01L 29/456 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor device includes a substrate having a plurality of fins protruding therefrom and an active region on the fins. The device further includes a contact including a conductive region having a concave portion defining an upper portion and a lower portion of the conductive region, an interlayer insulating layer on the active region, and a side insulating layer interposed between the interlayer insulating layer and the lower portion of the conductive region.