The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jan. 27, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takeshi Sunada, Tokyo, JP;

Daisuke Oshida, Tokyo, JP;

Makoto Yabuuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/22 (2006.01); G06F 11/30 (2006.01); G11C 16/34 (2006.01); G11C 17/18 (2006.01); G11C 29/04 (2006.01); G11C 29/12 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 29/50 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G06F 11/008 (2013.01); G06F 11/2284 (2013.01); G06F 11/3072 (2013.01); G11C 29/12005 (2013.01); G11C 29/42 (2013.01); G11C 29/52 (2013.01); G06F 2201/81 (2013.01); G11C 16/349 (2013.01); G11C 17/18 (2013.01); G11C 29/50004 (2013.01); G11C 2029/0409 (2013.01);
Abstract

The disclosed invention can provide a semiconductor device, a lifetime prediction system, and a lifetime prediction method enabling it to notify a user that a semiconductor device is likely to become faulty, before the semiconductor device becomes faulty. A semiconductor device includes functional units and a lifetime prediction circuit. The lifetime prediction circuit acquires a deterioration degree indicating a degree of how each functional unit deteriorates, using a signal that is output from each functional unit. The lifetime prediction circuit executes processing to make a notification that the semiconductor device is close to its lifetime, if the deterioration degree is more than a first threshold.


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