The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Mar. 14, 2018
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Akira Katayama, Seoul, KR;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A memory device includes a sense amplifier including a first input node and a second input node and configured to output a signal based on a difference between input values at the first input node and the second input node; a first path including a memory cell to be selectively connected to the first input node and provided between the first input node and a ground node; and a second path including a reference cell to be selectively connected to the second input node and provided between the second input node and the ground node. The input value at the second input node of the sense amplifier is changed such that a change amount of the input value between two different temperatures Tand (T+ΔT) in a second temperature region, at a temperature higher than in a first temperature region, of the memory cell becomes larger than the change amount of the input value between two different temperatures Tand (T+ΔT) in the first temperature region of the memory cell, where ΔT is an increase amount of the temperature.