The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Dec. 29, 2015
Applicant:
Georgia State University Research Foundation, Inc., Atlanta, GA (US);
Inventor:
Nikolaus Dietz, Tucker, GA (US);
Assignee:
Georgia State University Research Foundation, Inc., Atlanta, GA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); H01L 21/02 (2006.01); H01L 33/32 (2010.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C30B 29/40 (2006.01); C23C 16/30 (2006.01); C23C 16/52 (2006.01); C30B 25/16 (2006.01); G05D 11/13 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C23C 16/303 (2013.01); C23C 16/4584 (2013.01); C23C 16/45502 (2013.01); C23C 16/45523 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); C30B 25/165 (2013.01); C30B 29/403 (2013.01); G05D 11/135 (2013.01); H01L 21/0254 (2013.01); H01L 33/32 (2013.01);
Abstract
A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.