The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Nov. 30, 2016
Denso Corporation, Kariya, Aichi-pref., JP;
Kiyokazu Akiyama, Nisshin, JP;
Yasunari Yanagiba, Kariya, JP;
DENSO CORPORATION, Kariya, Aichi-pref., JP;
Abstract
A first land and a first ground pattern generate a first parasitic capacitance CLAND by capacitive coupling with a first insulating layer interposed therebetween. Then, the first parasitic capacitance CLAND is defined as a predetermined capacitance that suppresses an impedance of a via part from changing due to a change in an inductance component of the via part with respect to a first transmission line. As a result, it is possible to match the impedance of the via part with a impedance of the first transmission line by adjusting the first parasitic capacitance CLAND caused by the first land and the first ground pattern. Therefore, it is possible to prevent the transmission characteristics of the multilayer substrate from deteriorating without requiring the disposition of cavities such as through holes in the multilayer substrate.