The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Nov. 01, 2017
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electro-Mechanics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/21 (2006.01); H03F 1/32 (2006.01); H03F 3/195 (2006.01); H03F 1/30 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 1/0261 (2013.01); H03F 1/301 (2013.01); H03F 1/3205 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/245 (2013.01); H03F 2200/18 (2013.01); H03F 2200/243 (2013.01); H03F 2200/366 (2013.01); H03F 2200/447 (2013.01); H03F 2200/451 (2013.01);
Abstract
A power amplifier includes an amplifying circuit configured to amplify an input signal and comprising transistors, which may be disposed in parallel with one another and divided into a first group of transistors and a second group of transistors. The power amplifier also includes a bias circuit configured to supply bias power to one of the transistors of the first group and the transistors of the second group.