The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Jun. 17, 2016
Applicant:

Mahle International Gmbh, Stuttgart, DE;

Inventors:

Juergen Gruenwald, Ludwigsburg, DE;

Christian Heneka, Karlsruhe, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/30 (2006.01); H01L 35/34 (2006.01); F01N 5/02 (2006.01); F25B 21/04 (2006.01); H01L 35/32 (2006.01);
U.S. Cl.
CPC ...
H01L 35/30 (2013.01); F01N 5/025 (2013.01); F25B 21/04 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01);
Abstract

A method for producing a Peltier element of a heat exchanger for temperature control of a fluid flowable through a flow chamber may include providing an electrically conductive belt. The method may also include providing the belt with a plurality of p-doped P-semiconductors and a plurality of n-doped N-semiconductors so as to alternate with one another along the belt. The plurality of p-doped P-semiconductors and the plurality of n-doped N-semiconductors respectively may have a side facing away from the flow chamber electrically contacted by a contacting structure that may include a plurality of contact elements. The method may also include separating the belt to produce a plurality of connecting elements of a connecting structure electrically contacting a side of the plurality of p-doped P-semiconductors and the plurality of n-doped N-semiconductors facing towards the flow chamber, respectively.


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