The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Jun. 08, 2018
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Hyeon Chae, Ansan-si, KR;

Jong Min Jang, Ansan-si, KR;

Won Young Roh, Ansan-si, KR;

Dae Woong Suh, Ansan-si, KR;

Min Woo Kang, Ansan-si, KR;

Joon Sub Lee, Ansan-si, KR;

Hyun A Kim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/12 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light emitting diode including a first conductive type semiconductor layer; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa, a current spreading layer disposed on the mesa and the electrode and including a first portion, a second portion, and a third portion configured to be in ohmic-contact with a first end portion, a second end portion, and a middle portion of the first conductive type semiconductor layer, respectively, an insulation layer disposed on the mesa and the first conductive type semiconductor layer and having a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.


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