The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Oct. 09, 2012
Applicant:
Lg Electronics, Inc., Seoul, KR;
Inventors:
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method of manufacturing a solar cell according to an embodiment includes the steps of: forming an emitter layer by ion-implanting a first conductive type dopant to a first surface of a semiconductor substrate; and forming a back surface field layer by ion-implanting a second conductive type dopant to a second surface of the semiconductor substrate. When an additional dopant is a dopant other than the first and second conductive type dopants, an amount of the additional dopant doped during the forming the back surface field layer is larger than an amount of the additional dopant doped during the forming the emitter layer.