The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Jun. 28, 2016
Applicant:

The United States of America As Represented BY the Secretary of the Army—u.s. Army Research Laboratory, Washington, DC (US);

Inventors:

Daniel B. Knorr, Jr., Port Deposit, MD (US);

Nathan C. Henry, Baltimore, MD (US);

Joseph L. Lenhart, Port Deposit, MD (US);

Neil F. Baril, Stafford, VA (US);

Meimei Tidrow, Annandale, VA (US);

Sumith Bandara, Fairfax, VA (US);

Jan Andzelm, Northeast, MD (US);

Kristen S. Williams, Madisonq, AL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/02167 (2013.01); H01L 31/184 (2013.01); H01L 31/186 (2013.01); H01L 31/1868 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for producing a surfaced passivated, encapsulated surface III-V type II superlattice (T2SL) photodetector, more specifically a p-type heterojunction device by cleaning, etching and exposing the surface of a III/V material to solution mixtures which simultaneously removes oxides from the surface and encapsulates the surfaces.


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