The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Feb. 24, 2016
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Masatomi Harada, Sakai, JP;
Kenichi Higashi, Sakai, JP;
Takeshi Kamikawa, Sakai, JP;
Toshihiko Sakai, Sakai, JP;
Tokuaki Kuniyoshi, Sakai, JP;
Kazuya Tsujino, Sakai, JP;
Liumin Zou, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Abstract
A photovoltaic device () includes: an i-type amorphous semiconductor layer () formed in contact with one of the surfaces of a semiconductor substrate (); p-type amorphous semiconductor strips () spaced apart from each other and provided on the i-type amorphous semiconductor layer (); and n-type amorphous semiconductor strips () spaced apart from each other and provided on the i amorphous semiconductor layer (), each n-type amorphous semiconductor strip () being adjacent to at least one of the p-type amorphous semiconductor strips () as traced along an in-plane direction of the semiconductor substrate (). The photovoltaic device () further includes electrodes () as a protection layer formed in contact with the i-type amorphous semiconductor layer () between adjacent p-type amorphous semiconductor strips () and between adjacent n-type amorphous semiconductor strips ().