The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Feb. 29, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Fumihito Masuoka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
First and second p-type anode layers () are provided side by side on a drift layer (). N-type cathode layer () and p-type cathode layer () are provided side by side below the drift layer (). An n-type buffer layer () is provided between the drift layer () and the n-type cathode layer () and between the drift layer () and the p-type cathode layer (). The first p-type anode layer () has a greater diffusion depth than a diffusion depth of the second p-type anode layer (). The first p-type anode layer () has a greater impurity concentration than an impurity concentration of the second p-type anode layer (). The n-type cathode layer () has a greater diffusion depth than a diffusion depth of the p-type cathode layer (). The n-type cathode layer () has a greater impurity concentration than an impurity concentration of the p-type cathode layer ().