The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Jul. 11, 2018
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;

Inventors:

Hidetoshi Asahara, Ibo Hyogo, JP;

Akihiro Tanaka, Himeji Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/739 (2006.01); H01L 29/732 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H03K 17/687 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7803 (2013.01); H01L 29/0615 (2013.01); H01L 29/0856 (2013.01); H01L 29/0873 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/7813 (2013.01); H01L 27/088 (2013.01); H01L 27/0823 (2013.01); H01L 29/66348 (2013.01); H01L 29/7395 (2013.01); H03K 17/6871 (2013.01);
Abstract

A semiconductor device of an embodiment includes a semiconductor layer having a first plane and a second plane; a first conductivity type first semiconductor region; a first conductivity type second semiconductor region between the first semiconductor region and the first plane; a second conductivity type third semiconductor region and a fourth semiconductor region between the second semiconductor region and the first plane; a first conductivity type fifth semiconductor region between the third semiconductor region and the first plane; a first conductivity type sixth semiconductor region type between the fourth semiconductor region and the first plane; a first conductivity type seventh semiconductor region between the third semiconductor region and the fourth semiconductor region, between the first semiconductor region and the first plane, and having impurity concentration higher than the first conductivity type impurity concentration of the second semiconductor region; first and a second gate electrode; first and second gate insulating film.


Find Patent Forward Citations

Asahara, Hidetoshi. (2019). Semiconductor device (U.S. Patent No. 10355124). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10355124

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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