The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 07, 2017
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kenjiro Uesugi, Kawasaki, JP;
Aya Shindome, Yokohama, JP;
Daimotsu Kato, Kawasaki, JP;
Masahiko Kuraguchi, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a trench and exposing a portion of a first film at a bottom portion of the trench by removing a portion of a second film by performing dry etching using a gas including a first element. The second film is provided on the first film. The first film includes AlGaN (0≤x1<1). The second film includes AlGaN (0<x2<1 and x1<x2). The method can include performing heat treatment while causing the portion being exposed of the first film to contact an atmosphere including NH, forming an insulating film on the portion of the first film after the heat treatment, and forming an electrode on the insulating film.