The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Jan. 14, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Eun Yeoung Choi, Hwaseong-si, KR;
Jun Kyu Yang, Seoul, KR;
Young Jin Noh, Suwon-si, KR;
Jae Young Ahn, Seongnam-si, KR;
Jae Hyun Yang, Suwon-si, KR;
Dong Chul Yoo, Seongnam-si, KR;
Jae Ho Choi, Seoul, KR;
Abstract
A plurality of gate electrodes is stacked on an upper surface of a substrate in a direction perpendicular to an upper surface of the substrate. A channel region penetrates through the plurality of gate electrodes to extend perpendicularly to the upper surface of the substrate. A gate dielectric layer includes a tunneling layer, a charge storage layer and a blocking layer that are sequentially disposed between the channel region and the plurality of gate electrodes. The charge storage layer includes a plurality of doping elements and a plurality of deep level traps generated by the plurality of doping element. A concentration distribution of the plurality of doping elements in a thickness direction of the charge storage layer is non-uniform.