The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Dec. 14, 2018
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Tsutomu Kiyosawa, Toyama, JP;
Atsushi Ohoka, Kyoto, JP;
Abstract
Semiconductor device includes semiconductor substrate, drift layer, first electrode, and second electrode. Semiconductor substrate is of a first conductivity type and is formed of a silicon carbide semiconductor, a gallium nitride semiconductor, or the like. For example, semiconductor substrate is an n-type silicon carbide semiconductor substrate. Drift layer is an epitaxial semiconductor layer of the first conductivity type which is formed on upper surface of semiconductor substrate by epitaxial growth. Drift layer is formed of, for example, an n-type silicon carbide semiconductor. Drift layer has a thickness of t. For example, the thickness t is between about 5 μm and about 100 μm (inclusive).