The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Nov. 28, 2017
Fuji Electric Co., Ltd., Kanagawa, JP;
Naoki Mitamura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a drift region of a first conductivity type; a base region of a second conductivity type in the semiconductor substrate; an emitter region of the first conductivity type in the semiconductor substrate; a first gate trench portion that is formed in the upper surface of the semiconductor substrate and is in contact with the emitter region and the base region; a second gate trench portion formed in the upper surface of the semiconductor substrate; a first electrical element electrically connected to the first gate trench portion; and a second electrical element electrically connected to the second gate trench portion, wherein a time constant of an RC circuit constituted by the second electrical element and the second gate trench portion is greater than a time constant of an RC circuit constituted by the first electrical element and the first gate trench portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile