The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Aug. 19, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Tomohito Kudo, Tokyo, JP;
Yoshihumi Tomomatsu, Tokyo, JP;
Hideki Haruguchi, Tokyo, JP;
Yasuo Ata, Tokyo, JP;
Mitsubishi Electronic Corporation, Tokyo, JP;
Abstract
A third dummy trench () is orthogonal to the first and second dummy trenches () in the dummy cell region of a substrate end portion. An interlayer insulating film () insulates the p-type diffusion layer () in the dummy cell region of a substrate center portion situated between the first and second dummy trenches () from the emitter electrode (). The third dummy trench () separates the p-type diffusion layer () in the dummy cell region of the substrate center portion from the p-type diffusion layer () in the dummy cell region of the substrate end portion connected to the emitter electrode (). A p-type well layer () is provided deeper than the third dummy trench () in the substrate end portion. The third dummy trench () is provided closer to a center of the n-type substrate than the p-type well layer ().