The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Aug. 22, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroshi Kono, Himeji Hyogo, JP;

Takuma Suzuki, Himeji Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7813 (2013.01);
Abstract

A device includes a silicon carbide layer between first and second electrodes. The silicon carbide layer includes first region, second region between the first region and second electrode, and third region between the second region and second electrode. The device includes first and second trenches, through the second and third regions and terminating within the first region, having a layer formed thereon, and spaced by portions of the second and third regions. The silicon carbide layer includes fourth region between the third region and first trench, and fifth region between the third region and second trench. The second region includes a fourth portion between first and second portions, and a fifth portion between second and third portions. The first, second, and third portions have lower impurity than the fourth and fifth portions, and the fourth and fifth portions extend closer to the first electrode than do the other portions.


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