The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Feb. 22, 2017
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Kazuatsu Ito, Sakai, JP;

Seiji Kaneko, Sakai, JP;

Yohsuke Kanzaki, Sakai, JP;

Takao Saitoh, Sakai, JP;

Tadayoshi Miyamoto, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/146 (2013.01); H01L 27/14612 (2013.01); H01L 27/14658 (2013.01); H01L 27/14692 (2013.01); H01L 29/786 (2013.01); H01L 31/10 (2013.01); H01L 29/7869 (2013.01); H01L 31/105 (2013.01);
Abstract

An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device () includes: an oxide semiconductor layer () provided on a substrate (); a passivation film () and a planarizing film () which are stacked on the oxide semiconductor layer; and a photodiode () including a lower electrode (), a photoelectric conversion layer (), and an upper electrode (). The lower electrode is connected to a source electrode () via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.


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